5SHY3545L0005 ABB 可控硅
ABB风电IGCT可控硅5SHY35L4510 5SHY3545L0003 5SHY3545L0005
关键要求是保持当前的外部尺寸，以便与应用和集成门单元兼容。
扩展现有RC-IGCT平台的潜力包括:
通过有效利用原始硅晶片增加器件直径。
最小栅极电路阻抗–通过在器件外围使用栅极触点基础设施，并通过外壳对栅极触点进行布线来实现。
通过将栅极触点移至外围来改善冷却——现在不再需要用于传输栅极信号的极片沟槽。
通过调整HPT+平台增加最大可控电流[2]。
通过提高生产线的相应能力，设备尺寸从91毫米增加到94毫米，相当于增加了7%的面积。
通过改进外壳壁的厚度公差，可以在不改变外壳外部尺寸的情况下适应更大的晶片直径。如图1所示，如果其他条件保持不变，通过径向向外移动栅极触点，其面积消耗会增加。为了抵消这种影响，设备的对中公差降低了50%以上。
这导致可用于执行设备功能的有效面积增加了21%。额外的面积完全给了二极管，而IGCT面积比现有平台略小。
为了关断大电流，IGCT非常依赖于低门电路杂散阻抗。电感阻抗有三个贡献者:晶片、套管和门单元。与衬套相比，晶片和浇口单元的贡献较低。有了容纳外围栅极的新平台，可以通过使栅极和阴极导体彼此靠近来减少栅极和阴极的分离，如图2所示。
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Highest Power Density for Most Compact Equipment
With the introduction of its latest Reverse-Conducting Integrated Gate Commuted Thyristors platform(RC-IGCT),ABB sets a new benchmark in high power semiconductor device performance.The initial RC-IGCT release is a 4500 V,3600 A device.Available in variants optimized for medium switching frequency applications found with 3-level topologies,and for low switching frequency used in Multi-Level Modular Converters(MMC).The repetitive turn-OFF current of 3600 A is a record value in its class.
For the converter manufacturer,it means a significantly compact converter design than previously.The device can be used in many applications including medium voltage drive(MVD),power grid compensators,wind,rail-intertie and shore-to-ship.
Introduction
The advance in power conversion towards high power and high current,driven by renewable energy,grid stability and industrial drives,calls for compact power semiconductors with high current capability,low losses and high reliability.IGCT,compared to the ever-maturing IGBT technology,offers the following advantages:
Low ON-state voltage,leading to lower total losses
High current capability without paralleling
Inherent ability to withstand large fault currents without rupturing
Potential for stable short-circuit failure mode after failure
For this inverter type,the IGCT’s low loss advantage was quantified in[1].Depending on the inverter mode,the losses are 10–15 percent lower using IGCTs than IGBTs.
This new IGCT platform is the culmination of some 20 years of continuous development.
